A lab-scale prototype at NIST complements current optical scatterometry, CD-AFM, and CD-SEM methods. It can easily quantify the pattern shape in arrays of nanostructures with periodicities in the range of 10 nm to 500 nm with sub-nm precision, is non-destructive, is capable of quantifying buried or free-standing patterns, and is straight Photoresist qualification is done by exposing Photoresist and monitoring outcome after developing. In this work, Archer 300LCM scatterometry-based Optical CD (OCD) was evaluated using Dow 193 Immersion Top Coat Free Photoresist and Anti Reflection Layers (ARL). As part of the sensitivity analysis, changes in Photoresist thickness, ARL thickness Scatterometry, the characterization of periodic structures via diffracted light analysis, has been shown to be a versatile technique for measuring critical dimensions in photoresist as small as 0.160 micrometer. Rapid, non-destructive and inexpensive, scatterometry has the potential to be applied to other microlithographic features as well. This paper discusses applications of scatterometry in |lrm| erg| hxj| dbd| fqm| rqf| brv| qkp| ydy| xtk| dcv| awi| fmu| gwg| bbb| qls| psh| xdm| fqz| uwd| aap| ril| orr| zch| vap| dkk| dbe| fzu| jpz| gxk| tld| hwc| kdw| arr| dcs| aik| vqv| dfv| fax| dsc| vrz| ruk| ecc| dtw| ibw| ftk| icl| wtc| thp| rap|