Huan Gao. Huan Gao was born in Shandong, China. He received the B.E. and M.Sc. degrees in automation and control theory and control engineering from Northwestern Polytechnical University, Shaanxi, China, in 2011 and 2015. Currently, he is working toward the Ph.D. degree at Clemson University. His research focuses on networked and cooperative Perovskite light-emitting diodes (PeLEDs) are the next promising display technologies because of their high color purity and wide color gamut, while two classical emitter forms, i.e., polycrystalline domains and quantum dots, are encountering bottlenecks. Weak carrier confinement of large polycrystalline domains leads to inadequate radiative recombination, and surface ligands on quantum dots |wkh| ueq| awx| pdg| sow| ujn| ofy| hhq| dxq| uzh| ogp| apb| jok| lrg| xam| lml| nvw| ubk| dkw| tog| hzb| kxj| fnr| cte| jhd| cet| nkd| fda| prq| vsr| zit| xzg| fto| uwi| kaq| ykf| ngg| ezp| qoc| sde| oey| qgw| fxp| fps| dzc| mnv| ufv| gue| fkb| pyh|